发明名称 BIPOLAR MEMORY
摘要 <p>PURPOSE:To improve switching characteristics of a memory read by lessening influences of fluctuations of temperature upon a DC noise margin, by matching the temperature characteristics of a comparator input signal with those of a reference signal. CONSTITUTION:Transistors (TR) 203 and 204 of a reference bias circuit applying a reference signal to a comparator 200 forming an output circuit are of the same size with switching TRs 10 and 11 forming an input circuit and controlled by a 1/6 decoder 8, and with switching TRs 17 and 18 which correspond to the 1/64 decoder; and a diode 205 is of the same size with diodes 19-22 of fuses forming a PROM, and a resistance 207 is of the same size with fuses 23-26. Therefore, temperature characteristics of an input signal to the comparator 200 become similar with those of a reference signal to lessen influences of fluctuations of temperature upon a DC noise margin, and consequently while an increase in amplitude is prevented, a time constant never increases, generating an output which corresponds to the memory contents of a memory based upon stable and fast switching operation.</p>
申请公布号 JPS56169288(A) 申请公布日期 1981.12.25
申请号 JP19800073935 申请日期 1980.05.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 MIYAZAKI YUKIO;TAKEDA MITSUGI;NAKAI YOSHIYUKI
分类号 G11C17/06;G11C7/14 主分类号 G11C17/06
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