发明名称 MOS-cascoded bipolar current sources in non-epitaxial structure
摘要 A 16-bit D/A converter formed on a single monolithic chip and having two cascaded stages each including a 256-R resistor string DAC. The analog output voltage of the first stage is coupled to the second stage by two buffer amplifiers each formed by a non-epitaxial process using a P-type substrate. The amplifiers include NMOS and PMOS-cascaded bipolar current sources arranged to avoid the use of metallization to provide for electrical interconnections within the source.
申请公布号 US5103281(A) 申请公布日期 1992.04.07
申请号 US19890423265 申请日期 1989.10.18
申请人 HOLLOWAY, PETER R. 发明人 HOLLOWAY, PETER R.
分类号 H01L27/07 主分类号 H01L27/07
代理机构 代理人
主权项
地址