| 摘要 |
PURPOSE:To form amorphous Si excellent in film quality by a practical photo assisted CVD method instead of a plasma CVD method, by supplying gas of hydrogen compound of Si in a space on a substrate surface, decomposing the hydrogen compound by projecting electromagnetic waves containing specified wavelength light, and depositing generated simple substance Si or low- hydrogenated on the substrate. CONSTITUTION:Gas of hydrogen compound of silicon is supplied in a space on a substrate 3; electromagnetic waves containing light whose wavelength is suitable to excite 2P electrons of silicon atoms is projected, thereby decomposing the hydrogen compound; generated single substance silicon or low- hydrogenated silicon is deposited on the substrate 3. For example, the substrate 3 on a substrate mounting stand 2 in a reaction chamber 1 is cooled at 95K by making liquid nitrogen flow in a cooling pipe 4. Material gas obtained by diluting SiH4 to be concentration of 5% with He is fed into a reaction chamber via a leak valve 8 and a solenoid valve 9. Gas in the reaction chamber is discharged by an exhauster constituted of a turbo pump 10 and a rotary pump 11, and the inside pressure is kept at 0.1-1Torr. SOR light 12 is projected from above the substrate 3. |
