| 摘要 |
PURPOSE:To improve critical current by introducing a rare gas into crystal. CONSTITUTION:Glow discharge is carried out in an O2 gas flow mixed with an inert gas such as Ar and a target 13 composed of a sintered Y-Ba-Cu-O-based oxide, etc., is sputtered by a sputtering device laid in a vacuum container 12 of a thin film forming device to growth crystal of oxide superconductor on a growth substrate 14 heated to a given temperature. A rare gas ion such as He is irradiated from an ion gun 15 simultaneously with the film formation or alternately and the rare gas ion is injected into crystal of oxide superconductor. After crystal growth, the crystal of oxide superconductor is heat-treated in an O2 gas atmosphere at given temperature, clusters 2 and foams 3 of rare gas are formed in the crystal 1 to give an oxide superconductor having improved critical current. |
