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发明名称
MOS TRANSISTOR WITH LARGE GATE AREA
摘要
申请公布号
JPH04105359(A)
申请公布日期
1992.04.07
申请号
JP19900223714
申请日期
1990.08.23
申请人
SONY CORP
发明人
KURODA HIDEAKI
分类号
H01L27/04;H01L21/822;H01L21/8234;H01L27/088;H01L29/78
主分类号
H01L27/04
代理机构
代理人
主权项
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