发明名称 Field effect transistor with acceleration dependent gain
摘要 A micro-mechanical sensor having a field effect transistor formed in a proof mass portion of a substrate is provided. The proof mass portion is attached to a support portion of the substrate by a means for flexing such as a diaphragm or cantilever beam. A gate electrode is formed over a channel region of the field effect transistor and separated from the channel region by a gap whereby force applied to the sensor causes the proof mass portion to move towards the gate electrode due to flexing of the flexing means. As the channel region moves closer to the gate electrode, current flows through the field effect transistor generating an output signal.
申请公布号 US5103279(A) 申请公布日期 1992.04.07
申请号 US19900599526 申请日期 1990.10.18
申请人 MOTOROLA, INC. 发明人 GUTTERIDGE, RONALD J.
分类号 G01P15/12 主分类号 G01P15/12
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