| 摘要 |
A semiconductor memory comprising a plurality of memory cells including transistors provided on a semiconductor substrate and capacitors having upper electrodes, insulating films and lower electrodes provided on the transistors, one terminal of the transistor of the memory cell being connected to the lower electrode of the capacitor, wherein the capacitors of the adjacent memory cells are opposed to each other, a part of the capacitors being superposed perpendicularly to the semiconductor substrate.
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