| 摘要 |
PURPOSE:To enhance a non-volatile in frequency of rewrite by a method wherein an insulating film of laminated structure composed of a silicon nitride film and a silicon oxide film is made to serve as a tunnel insulating film, and a charge rewrite.erase dedicated electrode is provided onto a floating electrode. CONSTITUTION:Provided that an insulating film 9 of laminated structure composed of a silicon nitride film 7 and a silicon oxide film 8 is made to serve as a tunnel insulating film formed on a floating gate electrode 4 of polysilicon, and when a Furler.Nordheim tunnel current is made to flow or a rewrite is carried out, as holes are trapped at the interface between the silicon nitride film and the silicon oxide film 8, a memory can be enlarged in width of a threshold window. Furthermore, a control gate electrode 11 of polysilicon is provided onto the floating gate electrode 4 through the intermediary of a capacitor insulating film 10 or the insulating film of laminated structure, so that a semiconductor non-volatile memory is hardly affected by the fluctuation of a threshold value by the trapping of charge at readout, and consequently it can be sharply improved in rewrite frequency.
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