| 摘要 |
<p>PURPOSE:To obtain a semiconductor memory card which has an equivalent memory capacity to that of other memory medium such as floppy disk, or has a large memory capacity which exceeds that of other medium by equipping a wafer which is loaded on a base body and for which a plurality of chip state areas, on which a plurality of semiconductor memory elements are formed, are provided. CONSTITUTION:Between chips 34 which are formed in a wafer 12, dicing lines are normally established, however, at locations 52 which are equal to dicing lines, a wiring group in wafer 32A... which is connected with address signal terminals of respective chips 34, data signal terminal, power source terminal and grounding terminal, etc., are formed. That is, these locations 52 are used as common bus lines. Also, select terminals of respective chips are taken out from the chips by wiring 32B, and they are collected at one location of the wafer 12, or when a plurality of chips 40 are provided, they are collected to a plurality of locations which correspond with the quantity. At the end of the wiring 32 at this collected location, a pad electrode 54 is provided, and the chip 40 is electrically connected with the pad electrode 54. As a connecting means to perform this electrical connection, flip-chip bonding process is desirable.</p> |
