| 摘要 |
<p>PURPOSE:To improve the operation convenience of an electrically erasable/ rewritable read-only memory by controlling the gate potential of a memory cell selected at the time of writing data and preventing the sneak path of data between bit lines. CONSTITUTION:The sneak path of data between the bit lines BL0, BL1 at the time of writing data is prevented by controlling the gate potential of the memory cell selected at the time of writing the data. Thereby, it is not essential for the electrically erasable/rewritable read-only memory to erase the preceding written data from all addresses prior to data writing as required for a conventional memory, so that the operation convenience of the storage device can be improved.</p> |
