发明名称 MANUFACTURE OF GLASS MOLDED SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the adherence of a lead member to glass in a glass molded semiconductor device and to prevent the crack of the glass by roughening the surface of an Fe or Fe-Ni alloy electrode at the end of the lead member with aqueous solution of oxidative acid and then sealing it with glass. CONSTITUTION:When an electrode material is treated at 5-90 deg.C for approx. 0.5sec-15min. with aqueous 5-75% nitric acid, the surface of the material made of fernico, kovar or the like is roughened to the roughness of 5-50mu, a buffer part with glass is formed, the adherence of the surface with glass can be improved with an oxidized film formed simultaneously on the surface of the electrode material, and the crack of the glass can be prevented.
申请公布号 JPS56169352(A) 申请公布日期 1981.12.26
申请号 JP19800072206 申请日期 1980.05.30
申请人 发明人
分类号 H01L23/48;H01L21/56;H01L23/29;H01L23/31 主分类号 H01L23/48
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