| 摘要 |
PURPOSE:To obtain a preferable overall surface of a compound semiconductor with a simple vapor phase growing device by periodically repeating the steps of supplying a gas to be supplied to the device to a compound semiconductor material and supplying to a substrate crystal. CONSTITUTION:A Ga source 3 and a bypass tube 4 are provided at the upstream side of a substrate 2 placed in a reaction tube 1, and carrier gas flows through the tube. After the carrier gas controlled in its flow rate by a flowmeter 7 is fed through valves 8 and 9 and is included with AsCl3 vapor in a constant-temperature tank 11, it is supplied to the source 3 or the tube 4 upon opening or closing of switching valves 13 and 14. At that time the valves 13, 14 are alternately opened and closed, and the repeating period is suitably accelerated. Thus, the vicinity of the substrate crystal 2 can be maintained equivalently to the state that the reaction gas from the source 3 and the AsCl3 from the tube 4 are substantially simultaneously supplied. |
