| 摘要 |
<p>PURPOSE:To provide a finer pattern without reducing the areas of an electrode pattern and a resistor pattern by constituting an insulator film layer locally between an electrode film layer and a resistor film layer and by forming the electrode pattern and the resistor pattern in a vertical direction through the insulator film layer. CONSTITUTION:An insulator film layer 4 is formed locally between a resistor film layer 2 and an electrode film layer 3. And by forming a resistor film layer 4 beneath electrode film layers 3A and 3B through the insulator film layer 4, a finer pattern can be formed without reducing the areas of an electrode pattern and a resistor pattern.</p> |
