| 摘要 |
<p>PURPOSE:To prevent that a voltage change influences a measuring operation and a drawing operation by a method wherein a voltage is applied to an electrode except while at least a wafer is irradiated with a charge particle beam. CONSTITUTION:A wafer 7 which in placed on a vacuum clamping stage 2 and which is grounded is irradiated with an electron beam by using an electron- optical system 1 which is constituted of an electron gun 11, an aperture 12, a horizontal scanning deflector 13, a vertical scanning deflector 14 and an objective lens 15. Thereby, the line width and the like of a pattern formed on the wafer 7 are measured. A control device 50 receives, from an operation control means 6, a signal of whether the wafer 7 is being irradiated with the electron beam or not. Only when the wafer 7 is not irradiated with the electron beam, a voltage source 5 is connected to a base 21. When a voltage is applied to the base 21, an electrostatic force is generated between the base 21 and the wafer 7, and the wafer 7 is attracted electrostatically.</p> |
