| 摘要 |
PURPOSE:To fabricate fine semiconductor devices, etc., by adjusting cylindrical electron beam diameter, and carrying out exposure to the electron beam. CONSTITUTION:A cathode 3 of an electric field emitting electron gun is formed into a cylindrical shape and the end part in the lens 41 side is shapened by electrolytic etching, etc., to form an electron emitting part. Electrons are emitted from the cathode 3 owing to electric field emission phenomenon by applying an electric field between the lens 41 and the cathode 3 by an electric power source 5. The electron beam 6 at that time becomes cylindrical corresponding to the cathode shape. Then, exposure to electron beam is carried out while the electron beam diameter is so adjusted as to form a multi-projection region of secondary electrons, which are produced in resist by cylindrical electron beam radiation in the surrounding of the center and carry out resist exposure mainly, in the center part of the cylindrical electron beam 6 radiation part. As a result, one extremely fine resist pattern 1 with any optional shape can be exposed by one-time exposure. |
