发明名称 RESIST PATTERN FORMING METHOD AND DEVICE THEREFOR
摘要 PURPOSE:To improve the pattern accuracy of a resist by irradiating the patterns consisting of a photosensitive resin with an energy ray while applying force in the direction perpendicular to a substrate so as to selectively and anisotropically graft-polymerize a polymerizing agent on the patterns. CONSTITUTION:The patterns 22a consisting of the photosensitive resin 22 are formed on the substrate 21 and gas contg. the polymerizing agent is introduced to the patterns 22a. While the force is applied in the direction perpendicular to the substrate, the patterns 22a are irradiated with the energy ray, by which the polymerizing agent is selectively and anisotropically graft-polymerized on the patterns 22a. Since the gravity acts in the direction perpendicular to the substrate in this case, the graft polymn. reaction is effected anisotropically in the direction perpendicular to the substrate as compared with the case of the execution of the graft polymn. reaction by installing the substrate upward. The resist patterns having the good accuracy are obtd. in this way.
申请公布号 JPH04101151(A) 申请公布日期 1992.04.02
申请号 JP19900218227 申请日期 1990.08.21
申请人 TOSHIBA CORP 发明人 ITO SHINICHI
分类号 G03F7/26;C08F2/46;C08F2/48;G03F7/40;H01L21/027 主分类号 G03F7/26
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