| 摘要 |
<p>Compound semiconductor crystals are grown through the organometallic vapor phase epitaxial method vertically by supplying the epitaxial gas divided into a plurality of flows so that each flow rate is adjusted from sub-injectors (11) arranged to cover the entire surface of a substrate (3) to grow crystals to the entire surface of the substrate (3). The method and apparatus of the present invention are effective especially for growth of quaternary III-V compound semiconductor crystals.</p> |
