发明名称 |
Process for fabricating integrated circuits. |
摘要 |
<p>Integrated circuits employing titanium nitride are significantly improved by using a specific method for formation of the titanium nitride in the device fabrication. In particular, a plasma such as one formed in an electron cyclotron resonance apparatus is employed to dissociate a source of nitrogen and a source of hydrogen and the dissociation products are combined at the integrated circuit deposition substrate with titanium tetrachloride. The resulting deposition is essentially devoid of chlorine and has advantageous step-coverage properties.</p> |
申请公布号 |
EP0478233(A2) |
申请公布日期 |
1992.04.01 |
申请号 |
EP19910308581 |
申请日期 |
1991.09.20 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
FOO, PANG-DOW;PAI, CHIEN-SHING |
分类号 |
H01L21/285;C23C16/32;C23C16/50;C23C16/511;H01L21/28;H01L21/768 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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