| 摘要 |
<p>This invention provides a semiconductor memory device comprising a plurality of memory cells (11) having a common source diffused region (26) extending in a specified direction, a word line (12) that extends in parallel with the common source diffused region (26) and is connected to each gate of the plurality of memory cells (11), a first source interconnection (14) composed of a first metal interconnection layer electrically connected to the common source diffused region (26), and a second source interconnection (17) that extends in parallel with the word line (12) and is composed of a second metal interconnection layer electrically connected to the first source interconnection (14). <IMAGE> <IMAGE></p> |
