| 摘要 |
<p>A random access memory device comprises a plurality of memory cells each having a transfer field effect transistor (26a/26b/24/25a) and a stacked type storage capacitor (28/30/31). A first inter-level insulating film (27) is provided between the transfer field effect transistor and the stacked type storage capacitor. A peripheral circuit has a plurality of component transistors, and each of the component transistors (26c/24/25c/32b/34) has source and drain regions (26c/34) of an LDD (lightly-doped drain) structure. The LDD structure is formed by using side walls (32b) made from an insulating film used for the first inter-level insulating film after the formation of the stacked type storage capacitor so that the source region (26b) of the transfer field effect transistor is not damaged by bombardment in an anisotropical etching for forming the side walls. <IMAGE></p> |
