| 摘要 |
PURPOSE:To obtain a blue light emitting diode which is high in luminous efficiency and of high brightness by a method wherein a non-doped zinc selenide film is made to grow as thick as 10-500Angstrom before a certain conductivity type zinc selenide film is epitaxially grown at a low temperature. CONSTITUTION:A zinc selenide single crystal film is grown on a GaAs crystal substrate through a vapor phase growth device to manufacture a blue light emitting element. Dimethyl zinc (DMZ) is used as II material gas, and hydrogen selenide (HzSe) is used as VI material gas, whereby a zinc selenide single crystal film is made to grow. When an epitaxial growth process is carried out, hydrogen selenide is fed at a mol flow rate of 23 and diluted with hydrogen carrier gas fed at a rate of 1l/minute. A GaAs substrate 6 is set at a temperature of 500 deg.C, and epitaxial growth is carried out for one minute. By this setup, a non-doped zinc selenide film 4 10-500Angstrom in thickness can be obtained. After the growth of the film 4, the feed of hydrogen selenide is stopped, and the temperature of the substrate 6 is made to decrease from 500 deg.C to 250 deg.C. |
