MANUFACTURE OF COMPLEMENTARY MOS FIELD EFFECT TRANSISTOR,申请号JP19900216153-传众专利搜索

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发明名称	MANUFACTURE OF COMPLEMENTARY MOS FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPH0498869(A)	申请公布日期	1992.03.31
申请号	JP19900216153	申请日期	1990.08.16
申请人	NEC KYUSHU LTD	发明人	NODA KENJI
分类号	H01L27/092;H01L21/8238	主分类号	H01L27/092
代理机构		代理人
主权项
地址

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