| 摘要 |
In methods for TiN film by glow discharge of reactive gases such as TiCl4, N2 and H2 and carrier gas of Ar with radio frequency generator, it is characterized by inserting heating wire and thermocouple to substrate and deposition temperature, ratio of TiCl4 to N2 and working gas pressure are 450-530 deg.C, 1/20-1/25 and 2-3 torr, respectively. It has advantages of lowering rection temperature from 1000 deg.C to about 500 deg.C, increasing mass productivity, enhancing uniformity of film thickness in complex shaped substrate. Especially, tempering process for making tools can be substituted for heating during CVD process, so it is possible to omit heat treatment process after coating.
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