发明名称 PORTABLE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To prevent the generation of the breakage of an element or the degeneration of data by arranging the metal piece directly connected to the circuit ground of a built-in substrate in close vicinity to an insulating layer and forming the part opposed to the metal piece as a low withstand voltage part lower than the other part of the insulating layer in electrostatic withstand voltage. CONSTITUTION:An electrode piece 8 is arranged in close vicinity to a metal panel 2 and the ground terminal of this circuit is connected to the earth terminal of a terminal machine. The part opposed to the electrode piece 8 for a negative electrode among the respective parts of an insulating layer 1.0 is formed as a low withstand voltage part 10a lower than that of the other part of the insulating layer 10 in electrostatic withstand voltage. When the noise due to high level electrostatic discharge is applied to the metal panel 2, a discharge current flows to the circuit ground terminal 4 from the metal panel 2 but a part low in insulating withstand voltage is selected from this discharge route to form a discharge route reaching the circuit ground terminal 4 from the metal panel 2, a low withstand voltage part 10a and the electrode piece 8 for the negative electrode. Since a discharge current flows to the circuit ground terminal through the shortest route, it is prevented that an element is broken or data is degenerated.</p>
申请公布号 JPH0499699(A) 申请公布日期 1992.03.31
申请号 JP19900217613 申请日期 1990.08.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 MORI YOSHIHIDE;SHINOHARA TAKAYUKI
分类号 B42D15/10;G06K19/07;H05F3/02;H05K9/00 主分类号 B42D15/10
代理机构 代理人
主权项
地址