| 摘要 |
<p>PURPOSE:To enlarge the contact space with mold resin for increasing the bond strength by a method wherein a rugged structure by dummy patterns of an SiO2 oxide film, a polySi film, a SiN film, an Al film, etc., is erected on the peripheral part of a pad electrode. CONSTITUTION:Dummy patterns 2 comprising aluminum wiring material are arranged around an aluminum pad electrode 1 so as to erect a rugged step structure on an IC surface. Otherwise, the rugged step structure is erected on the surface of the peripheral part of the aluminum pad electrode 1 by arranging the dummy patterns 2 on the peripheral part of the aluminum pad electrode using the material applicable to the semiconductor manufacturing process of an SiO2 oxide film, a polysilicon film, a SiN base insulating film 3, etc. Through these procedures, the contact space with the mold resin material provided in the later process can be enlarged so as to enhance the mold reliability by increasing the bond strength between the IC mold resins.</p> |
