| 摘要 |
PURPOSE:To eliminate tie required for a defect avoiding processing by exchanging a different data bit which is previously stored in a semiconductor memory element for detect exchange with exchange data in accordance with the output of a defective bit storage memory. CONSTITUTION:At the time of a defective address for the defect of a semiconductor memory element array 1, a defective address operation circuit 12 exchanges the defective address by the different address which is previously stored in accordance with the output of the defective address storage memory 9. At the time of the defective bit, a defective data operation circuit 13 exchanges the defective data bit in the defective address with exchange data in accordance with the output of the defective bit storage memory 10 so as to exchange data. Thus, time required for a defect processing is shortened and the exchange processing is executed before an error occurred in the middle of an operation is processed and it becomes a hard error, whereby a semiconductor memory device with high reliability can be obtained. |
