| 摘要 |
PURPOSE:To protect a semiconductor memory against malfunction caused by alpharays by a method wherein a memory cell is covered with material which contains lead or lead oxide. CONSTITUTION:A word line 13 serving as the gate electrode of a transistor 12 is formed on an Si substrate 11, and impurity diffusion layers 14a and 14b serving as the source and the drain region of the transistor 12 on both the sides of the word line 13 inside the Si substrate 11. The word line 13 and others are covered with an SiO2 film 15 which serves as an interlaminar insulating film, and contact holes 16a and 16b are provided to the SiO2 film 15 so as to reach to both the impurity diffusion layers 14a and 14b. A polycrystalline Si film 21 serving as a memory node is connected to the impurity diffusion layer 14 through the intermediary of the contact hole 16a, and the polycrystalline Si film 21 is covered with a dielectric film 22. The dielectric film 22 and the others are covered with a polycrystalline Si film 23 which serves as the plate electrode of a capacitive element 17, the polycrystalline Si film 23 is covered with a PbOX film 24 which serves as an interlaminar insulating film. The Pb0X film 24 is formed in lamination through spin coating or sputtering or the like. |
