| 摘要 |
PURPOSE:To enable transfer gate transistors provided in a lateral direction to be balanced in threshold voltage or to be protected against an offset phenomenon by a method wherein a capacitor electrode is provided partially overlapping the upper part of a transfer gate electrode. CONSTITUTION:First, an insulating film 10 is selectively formed on the surface of a semiconductor substrate 1 to demarcate an element region, and a gate insulating film 8 is provided onto the element region concerned. Then, transfer gate electrodes 11a and 11b are provided, and the surfaces of the electrodes 11a and 11b are covered with insulating films 12a and 12b respectively. Thereafter, impurity layers 13a, 13b, and 13c whose conductivity types are opposite to that of the semiconductor substrate 1 are provided, grooves 2a and 2b are engraved on the surface of the semiconductor substrate 1, and capacitor insulating films 15a and 15b are formed thereon. Then, capacitor electrodes 14a and 14b are built. Next, interlaminar insulating films 16a and 16b are provided, an opening 18 is bored, and then a wiring metal electrode 17 is formed. |
