发明名称 |
Germanium silicon dioxide gate MOSFET |
摘要 |
The invention is a method of depositing a layer of polycrystalline silicon on a silicon dioxide substrate until the layer of polycrystalline silicon is thick enough to support the deposition of germanium thereon, but while thin enough to substantially avoid the deleterious effects on the characteristics of semiconductor device structure that the deposition of polycrystalline silicon would otherwise potentially cause. The polycrystalline layer is then exposed to a germanium containing gas at a temperature below the temperature at which germanium will deposit on silicon dioxide alone while preventing native growth of silicon dioxide on the polycrystalline silicon layer, and for a time sufficient for a desired thickness of polycrystalline germanium to be deposited on the layer of polycrystalline silicon.
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申请公布号 |
US5101247(A) |
申请公布日期 |
1992.03.31 |
申请号 |
US19900515595 |
申请日期 |
1990.04.27 |
申请人 |
NORTH CAROLINA STATE UNIVERSITY |
发明人 |
OZTURK, MEHMET;WORTMAN, JIMMIE |
分类号 |
H01L21/28;H01L29/49 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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