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发明名称
METHOD OF MANUFACTURING JUNCTION TYPE FILED EFFECT TRANSISTOR
摘要
申请公布号
JPS5210682(A)
申请公布日期
1977.01.27
申请号
JP19750086843
申请日期
1975.07.15
申请人
MATSUSHITA ELECTRIC IND CO LTD
发明人
NAGATA SEIICHI;TANAKA TSUNEO;FUKAI SHIYOUICHI
分类号
H01L29/80;H01L21/203
主分类号
H01L29/80
代理机构
代理人
主权项
地址
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