发明名称
摘要 PURPOSE:To synthesize a diamond thin film having a large surface area and uniform thickness by introducing an inert gas under a hydrogen atmosphere, and decomposing thermally gaseous hydrocarbon with a thermoelectron radiating material. CONSTITUTION:A substrate 3 is placed on a substrate support 2 in a reaction tube 1, and a thermoelectron radiating material 4 is arranged above the substrate 3 with a thermoelectron radiating material support 5. When the pressure is reduced, a cock 6 is closed and a cock 7 is opened to evacuate the inside of the reaction tube 1 with a vacuum apparatus 8. The cocks 9 and 10 are opened to introduce gaseous hydrogen and an inert gas into the reaction tube 1 from a hydrogen bomb 11 and an inert gas bomb 12. The pressure is regulated thereafter, and the substrate 5 and the thermoelectron radiating material 4 are heated by an electric furnace 13 and an AC source 14. Gaseous hydrocarbon is introduced into the reactor 1 from a gaseous hydrocarbon bomb 16 by opening a cock 15, and the growth is started. The symbol 17 is a mixer, and the mixed gas is discharged from a gas dis charge port 18. The operation can be performed under ordinary pressure by closing the cock 7, opening the cock 6, and discharging the gas from the gas discharge port 18.
申请公布号 JPH0419197(B2) 申请公布日期 1992.03.30
申请号 JP19830219969 申请日期 1983.11.22
申请人 NIPPON ELECTRIC CO 发明人 FUJII KAZUTAKA;SHOHATA NOBUAKI
分类号 C01B31/06;C30B25/00;C30B25/02;C30B29/04 主分类号 C01B31/06
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