发明名称 FORMATION OF PHOTORESIST PATTERN
摘要 PURPOSE:To make it possible to form a photoresist pattern on the surface of a substrate by exposing the whole surface of the substrate to expose a part of a photoresist layer which is not covered with a mask pattern and removing the exposed part. CONSTITUTION:A photosensitive mask layer 3 is laminated on the photoresist layer 2. The layer 3 consists of emulsion and mask patterns 33 based upon the layer 3 are formed on the layer 2 by removing unmasked part by developing. When the whole surface of the substrate 11 is exposed by an ultraviolet lamp, parts not coated with the patterns 33 are exposed. When the exposed parts 22 are removed by development, only the parts 21 of the layer 2 which are coated with the patterns 33 are left. Thus, a photoresist pattern 23 is formed on the surface of the substrate 11.
申请公布号 JPH0497256(A) 申请公布日期 1992.03.30
申请号 JP19900212980 申请日期 1990.08.10
申请人 SHARP CORP 发明人 KIMURA MAKOTO
分类号 G03F7/26;H01L21/027;H05K3/06 主分类号 G03F7/26
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