| 摘要 |
PURPOSE:To prevent electrical short-circuit due to the mutual contact of adjacent metallic plated films or unetched metallic conductive films which are current passage during plating by using first and second photoresist films as masks during plating. CONSTITUTION:In a case where a semiconductor substrate 1 is dipped in a gold plating solution and plating is performed by causing electric current to flow between the anode electrode plate of a plating apparatus with a titanium film 2 as a current passage, a gold plated wiring 7 does not grow in a direction perpendicular to the direction of the growth and adjacent gold plated wirings do not contact with each other as a result of using a first photoresist film 4A and a second photoresist film 4B as masks. Since there is no decrease in the plated region because of misalignment of patternings and fixed as a result of making a second opening portion 6B of the film 4B smaller than a first opening portion 6A of the film 4A, stable gold plating can be performed and electrical short-circuit can be prevented. |
