发明名称 |
PRODUCTION OF CDTE SINGLE CRYSTAL |
摘要 |
PURPOSE:To enhance the resistivity and energy resolving power of a CdTe single crystal contg. chlorine by heat-treating the single crystal in vacuum or in inert gas in special conditions. CONSTITUTION:A CdTe single crystal contg. 0.8-5wt.ppm chlorine is successively heat-treated in vacuum or in inert gas at 350-450 deg.C for >=11hr, at 150-350 deg.C for >=20hr and at 50-150 deg.C for >=10hr to obtain a CdTe single crystal having >=5X10<8>OMEGAcm resistivity.
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申请公布号 |
JPH0497992(A) |
申请公布日期 |
1992.03.30 |
申请号 |
JP19900210278 |
申请日期 |
1990.08.10 |
申请人 |
NIPPON MINING CO LTD |
发明人 |
FUNAKI MINORU;ASAHI TOSHIAKI |
分类号 |
G01T1/202;C30B29/48;C30B33/02 |
主分类号 |
G01T1/202 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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