发明名称 PRODUCTION OF CDTE SINGLE CRYSTAL
摘要 PURPOSE:To enhance the resistivity and energy resolving power of a CdTe single crystal contg. chlorine by heat-treating the single crystal in vacuum or in inert gas in special conditions. CONSTITUTION:A CdTe single crystal contg. 0.8-5wt.ppm chlorine is successively heat-treated in vacuum or in inert gas at 350-450 deg.C for >=11hr, at 150-350 deg.C for >=20hr and at 50-150 deg.C for >=10hr to obtain a CdTe single crystal having >=5X10<8>OMEGAcm resistivity.
申请公布号 JPH0497992(A) 申请公布日期 1992.03.30
申请号 JP19900210278 申请日期 1990.08.10
申请人 NIPPON MINING CO LTD 发明人 FUNAKI MINORU;ASAHI TOSHIAKI
分类号 G01T1/202;C30B29/48;C30B33/02 主分类号 G01T1/202
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