| 摘要 |
PURPOSE:To accurately form a phase shift layer at an optional place nearby a projection pattern part formed on the dry plate for exposure by forming an opening part which has narrower width than the phase shift layer, expanding the width of the opening part to the same width as the phase shift layer, and digging a transparent substrate right below the expanded opening part and forming the phase shift layer. CONSTITUTION:The opening part 3a which has the narrower width than the phase shift layer A is formed at the part where the phase shift layer A is formed and the entire surface except an opening part which has narrower width than the phase shift layer A is coated with photoresist 6 which has opposite photosensitive characteristics. Then the photoresist 6 is used as a mask for the side etching of light shield films 2a and 2b forming the opening part 8, thereby extending the width of the opening part 8 forming the phase shift layer A to the same width as the phase shift layer A. The transparent substrate 1 right below the extended opening part 9 is digged by anisotropic etching to form the phase shift layer 11. Consequently, the phase shift layer can accurately be formed at the optional place nearby the projection pattern part formed on the dry plate for exposure. |
