| 摘要 |
PURPOSE:To enhance light emitting efficiency by forming a ring-shaped electrode around the diode to effectively confine the carriers within the electrode aperture. CONSTITUTION:On top of an n-GaAs substrate 40, an n-GaAs light emitting layer 46, n-AlxGa1-xAs clad layer 44, p-GaAs light emitting layer 46, n- AlxGa1-xAs clad layer 48, and n-GaAs electrode connection layer 50 are formed and a DH structure LED created. These light emitting photodiodes with a DH structure are isolated from each other by a protection layer 56 and an electrode 36 is provided around the light emitting surface 30. The light emitting layer of the DH structure beneath the light emitting surface defined within the aperture of the electrode 32 is positioned within the light emitting surface area. With this structure, the light extraction efficiency of the LED array is improved and optical crosstalk is reduced without impairing high reliability and reproducibility performance. |
