| 摘要 |
PURPOSE:To easily enable flattening of the surface of a semiconductor substrate after formation of element isolating oxide film through microminiaturization of elements by forming isolating groove in the element isolating region and burying such grooves by coating them with a solvent mainly composed of Si compound. CONSTITUTION:After formation of an oxide film 2 at the surface of a P type semiconductor substrate 1, a positive resist 3 is deposited thereon. Dug isolating grooves 4 are formed and diffused layers are formed at the bottom of grooves 4 as the channel stopper layers 5. After removing the resist 3, a thin oxide film 6 is formed by oxidizing the inside of isolating grooves 4 and semiconductor surface. Moreover, the isolating grooves 4 are buried by coating them with ethanol organic solvent mainly consisting of the Si compound and the substrate surface is covered therewith. Thereafter, an SOG film 7 is formed with a silicon oxide. At the time of burying the formed isolating grooves 4, the surface of film 7 is made flat and a high quality oxide film is formed due to the annealing at a high temperature. The film 7 and a film 6 are etched back by the reaction ion etching until the surface of substrate 1 is exposed to form the element isolating oxide film 8. Thereby, elements may be microminiaturized and the substrate is easily flattened. |
