发明名称 |
PRODUCTION OF CDTE SINGLE CRYSTAL |
摘要 |
PURPOSE:To enhance the resistivity and high energy resolving power of a CdTe single crystal contg. chlorine by heat-treating the single crystal in special conditions. CONSTITUTION:Te is used as a solvent 5, a chlorine source such as CdCl2 is added so as to regulate the concn. of chlorine in the resulting crystal to 0.8-5wt. ppm and a CdTe single crystal 4 is grown and heat-treated by cooling at<=50 deg.C/hr rate in a temp. range of <=450 deg.C or an ampoule 3 contg. the CdTe single crystal 4 contg. 0.8-5wt.ppm chlorine grown with a crystal growth furnace 1 is moved to a heat treating furnace 2 and the single crystal 4 is heat-treated while stepwise reducing the temp. in a temp. range of <=450 deg.C.
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申请公布号 |
JPH0497991(A) |
申请公布日期 |
1992.03.30 |
申请号 |
JP19900210277 |
申请日期 |
1990.08.10 |
申请人 |
NIPPON MINING CO LTD |
发明人 |
FUNAKI MINORU;ASAHI TOSHIAKI |
分类号 |
C30B11/00;C30B29/48;C30B33/02;G01T1/16;G01T1/24;H01L21/208;H01L31/0248 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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