| 摘要 |
PURPOSE:To produce CdTe single crystal which is large in carrier life time and enhanced in energy resolution by bringing a Te solvent added with a trace amount of chlorine into contact with specified high-purity CdTe and heating them to deposit CdTe single crystal. CONSTITUTION:Cd and Te having >=99.9999% purity are encapsulated into an ampoule 2 so that the composition ratio (Te/Cd) is regulated to 1.1-9 at an atomic ratio. This ampoule 2 is introduced into the soaking part of an electric oven 1. After Cd and Te are heated and melted, the ampoule 2 is moved to the low temp. side at the velocity of 0.1-5mm/hr to cool the melt 4. Thereby high-purity CdTe 3 is deposited. Then the obtained CdTe 5 and a Te solvent 6 added with the trace amount of chlorine source (e.g. CdCl2) 7 are encapsulated into an ampoule. This ampoule is heated at 650-950 deg.C to melt one part of CdTe 5 and thereafter the heating part 9 is moved to CdTe 5 side at velocity of 1-10mm/day. CdTe single crystal 10 is deposited to the opposite side in the moving direction.
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