| 摘要 |
<p>PURPOSE:To prevent the gate breakdown from being caused by providing a means for setting decoder outputs all to an 'L' level in a stand-by state, and setting all to an 'L' level except a selected memory block in an active state. CONSTITUTION:A memory cell 5 and a decoder are divided into (n) pieces of memory blocks 9. Also, this circuit is provided with such a means as in a stand-by state, decoder outputs all become an 'L' level, and also, in an active state, only a decoder part of a selected memory block 9 becomes a read-out state, and decoder part outputs of the non-selected memory block 9 all become an 'L' level. That is, as for a word line 23 level, in a stand-by state, all the word line 23 levels become 'L', and in an active mode state, they become 'L' except a memory block selected state. In such a way, a bias stress to a memory cell gate part can be relaxed.</p> |
