| 摘要 |
PURPOSE:To simultaneously satisfy high resolution and depth of focus by approximately equaling the developing speed at 0.25 to 0.35Eo to the developing speed of unexposed parts when the exposure at which the aperture size of a mask and the photoresist size after development are equal is Eo. CONSTITUTION:The developing speed with respect to the light intensity (for example, 30% relative light intensity value) in the position corresponding to the mask edge is nearly equaled to the developing speed of the unexposed parts to provide the characteristic that the position of 30% value, 0.3Eo with respect to Eo in residual film characteristic curve exists at the point b of a saturation region I. The photoresist having such characteristics is the positive type photoresist which consists of a novolak resin and naphthoquinonedithizide and has the polydisperse degree Mw/Mn=5(Mw: weight average mol. wt., Mn: number average mol. wt.) of the mol. wt. thereof. In addition, the resolution obtainable by specifying the content of the novolak resin and naphthoquinonedithizide to 10:3 in high. The fluctuation rate in line width is small if the position of 0.3Eo exists in the saturation region I of the residual film characteristic curve. |
