| 摘要 |
<p>PURPOSE:To produce an output current responsive to the quantity of light incident on a photodetecting region and to respond to it at a high speed without power loss by composing an electrode region of a Bi oxide superconducting material, and composing the region of a superconducting photoconductive base material Bi2O3. CONSTITUTION:A photoconductive gate region 32 is formed on a substrate 31 in an example of a superconducting phototransistor. The region 32 is formed of a photoconductive Bi2O3 layer, and has peculiar photoconductivity in an exciting optical wavelength range of 460-620nm at a critical temperature or lower of a superconducting material made of Ca1Sr2Bi2Cu2Oz. A source region 33 and a drain region 34 are formed at both sides of the region 32 of Ca1Sr1Bi1Cu2Oz or Ca1Sr2Bi2Cu2Oz material layer. A bias source Vg is connected between the electrode 36 and the region 33, and a bias source Vsp and an output resistor R are connected between the regions 33 and 34. The element of the above-described structure is cooled to a critical temperature or lower of the photoconductive material layer, and irradiated with a light of the exciting wavelength range, carrier responsive to the incident light quantity is generated in the region 2.</p> |
