| 摘要 |
PURPOSE:To enable a stacked capacitor to have large capacitance of by zigzag forming the side face of the periphery of a storage electrode and also forming a capacitance insulating film and an upper electrode successively formed outside of the side face in accordance with the shape of the storage electrode. CONSTITUTION:A photo-resist 11 containing a thermal crosslinking agent is shaped onto a first polycrystalline silicon film 6, the photo-resist 11 is shrunk through post-baking, and irregularities are formed to the surface and side faces of the photo-resist. The polycrystalline silicon film 6 is formed to a pattern through anisotropic etching, the photo-resist 11, etc., are removed, and a storage electrode 6 is acquired. The irregularities of the photo-resist are transferred on the side faces of the storage electrode 6 at that time. When a capacitance insulating film 8 is shaped and an upper electrode 9 composed of second polycrystalline silicon is formed as the cell plate of a stacked capacitor, irregularities are formed to the side faces of the storage electrode, thus increasing the substantial surface area of a MOS capacitor, to obtain large capacitance. |
