| 摘要 |
PURPOSE:To manufacture a base substrate with high reproducibility by alternately repeatedly growing GaAs and GaInP on a groove or a ridge formed on a GaAs substrate, and shaping it in a forward mesa shape. CONSTITUTION:An SiO2 film 2a having several 1000Angstrom of thickness is deposited on an Si-doped n-type GaAs substrate 1 in plane (100) by a thermal CVD method. Then, it is coated with photomask, and a stripelike SiO2 mask 2 having 2-5mum of width extending in a direction <011> is formed by a photography method. Then with the mask 2 as a mask the substrate 1 is etched in depth of about 2-3mum, and the mask 2 is then removed with fluoric acid. Then, a multilayer film 3 of Si-doped GaAs and Ga0.5In0.5P is grown by an MOCVD method, and the reverse mesa-shaped ridge is shaped in a forward mesa shape. |
