| 摘要 |
<p>PURPOSE:To increase a threshold voltage by providing a part in which the quantity of a p-type layer or an n-type layer dopant is least in a p/i or n/i junction boundary and stepwisely increased from the boundary toward a p/ electrode or n/electrode junction boundary on a p-type layer or an n-type layer. CONSTITUTION:A layer formed of a-Si:H, etc., is provided as an i-type layer for constituting a semiconductor layer containing a pin-type or nip-type amorphous, a layer doped with group IIIb element in a-SiC:H is provided as a p-type layer, and a layer doped with group Vb element in a-Si:H is provided as an n-type layer. A p-type semiconductor layer 3 is so provided on a glass board 1 having a transparent electrode 2 as to minimize the quality of the dopant in a p/i junction boundary, an i-type semiconductor layer 4 is provided thereon, and an n-type semiconductor layer 5 is then provided. Dopant distribution is stepwisely increased from a p/i junction boundary or n/i junction boundary toward a p/electrode or an n/electrode junction boundary, thereby resultantly obtaining an effect of increasing a threshold voltage.</p> |
