A process for the synthesis of hard boron nitride.

摘要

The present invention provides a novel and useful process for the synthesis of hard boron nitride by a gaseous phase synthesis technique, which comprises adding a F atom-containing gas to the gaseous phase or adding a F atom-containing gas and H atom-containing gas to the gaseous phase, whereby the codeposited hexagonal boron nitride can selectively be etched and hard boron nitride of substantially single phase can finally be synthesized.