| 摘要 |
PURPOSE:To prevent insulation breakdown of a gate insulating film by providing a first impurity diffused region for forming a memory cell, a second impurity diffused region formed substantially in the same shape as the first region adjacently thereto, and connecting the second region to a word line. CONSTITUTION:A P-type semiconductor substrate is selectively oxidized, and element forming regions 21, 22, dummy diffused layer forming regions 31a, 31b, 32a, 32b are partitioned by oxide silicon films 4. With a photoresist film 10 and the film 4 as masks first N-type impurity diffused layers 2-1, 2-2, second N-type impurity diffused layers 3-1a, 3-1b, 3-2a, 3-2b are formed by ion implanting. After a contact hole 8 is formed, it is covered with a polycrystalline silicon film 6, and patterned to form a word line. Necessary heat treatment is conducted, covered with a polycrystalline silicon film 7, patterned to form a data line. Since the word line is connected to the second N-type impurity diffused region, damage of a gate oxide film is prevented. |
