Semiconductor device with vertical bipolar transistors.

摘要

In a semiconductor device having regions of a vertical pnp bipolar transistor, that is, a collector region composed of a p-type semiconductor region, a base region composed of an n-type semiconductor region and an emitter region composed of a p-type semiconductor region, a metal electrode is connected to the base region with polysilicon doped with impurities being provided therebetween. In another form of a semiconductor device, an n<+> region is provided within a base region of a vertical pnp bipolar transistor while surrounding an emitter region of the transistor. <IMAGE>