| 摘要 |
PURPOSE:To increase capacitance per area occupation ratio by forming a capacitor effectively utilizing the upper surface side surface, and lower surface of a storage electrode. CONSTITUTION:There are successively deposited on a substrate a first insulating film 5, a first conductive film 6, a second insulating film 7, and a second conductive film 8. A contact hole is opened in a desired region, and thereafter a third insulating film 10 is deposited. By etching back the conductive film 8 and part of the N type diffusion layer 2 located at the bottom of the contact hole are exposed to form a side wall insulating film. A polisilicon third conductive film is deposited on the entire surface and the third conductive film and the conductive film 8 are simultaneously patterned to form a region as a storage electrode. A fourth insulating film 13 and a fourth conductive film 14 are formed. For the increase of capacitance, an effective area is increased substantially by the area of the lower surface of the storage electrode compared with prior art, so that the capacitor effective area is increased by about 50%. |
