| 摘要 |
PURPOSE:To easily obtain a resistance value of a high resistance element such as a static RAM, etc., and to stably improve electric characteristics, yield, and reliability by altering the element from a single layer structure of a polycrystalline silicon film to a laminated film containing a thin high resistance film. CONSTITUTION:A P-well layer 12, a field insulating film 13, a gate oxide film 14, a gate electrode 15, a low concentration impurity layer 16, a spacer 17, a high concentration impurity layer 18, a first interlayer insulating film 19 are formed on an N-type silicon substrate 11. Then, a through hole is formed, and a resistance thin film as a high resistance element 25 is grown. The growth of the thin film is conducted by introducing SiH4, subjecting it to high frequency heating, adding NH3 thereto and growing a laminated film under different conditions totally 1200Angstrom thick. |
